罗斌森
  • 2N4123RLRM

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 200mA
    Voltage - Collector Emitter Breakdown (Max) : 30V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 2mA, 1V
    Power - Max : 625mW
    Frequency - Transition : 250MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
FDB4020P ON TO-263AB New 详细
74LVTH573WMX ON 20-SOIC New 详细
PCA9535EDWR2G ON 24-SOIC New 详细
MC74HC1G14DFT2G ON SC-88A (SC-70-5/SOT-353) New 详细
NGTB50N60SWG ON TO-247-3 New 详细
PZT2907AT3G ON SOT-223 New 详细
MBRS360T3H ON New 详细
NC7SZ02P5X_F40 ON SC-70-5 New 详细
QSE973RCE3R0 ON New 详细
3LP01SS-TL-EX ON 3-SSFP New 详细
NLAS4066DTR2G ON 16-TSSOP New 详细
TL494CDR2 ON 16-SOIC New 详细
NLSX5011AMX1TCG ON 6-ULLGA (1.45x1) New 详细
TIP147T ON TO-220-3 New 详细
FODM3052R3 ON 4-SMD New 详细
MC74HC244ADTR2G ON 20-TSSOP New 详细
N01L63W3AT25IT ON 44-TSOP II New 详细
MC10H604FNR2 ON 28-PLCC (11.51x11.51) New 详细
H11G2W ON 6-DIP New 详细
FQA8N100C ON TO-3PN New 详细