罗斌森
  • MUN5216DW1T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 4.7 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 250mW
    Package / Case : 6-TSSOP, SC-88, SOT-363
    Supplier Device Package : SC-88/SC70-6/SOT-363

极速报价

型号
品牌 封装 批号 查看
MMBTA14LT1G ON SOT-23-3 (TO-236) New 详细
MPS6651 ON TO-92-3 New 详细
MPSW3725 ON TO-226-3 New 详细
NCP1450ASN33T1G ON 5-TSOP New 详细
FOD8384R2 ON 5-SOP New 详细
NCP382LD10AAGEVB ON New 详细
FGP40N6S2 ON TO-220-3 New 详细
TL431ACP ON 8-PDIP New 详细
PACUSB-U3Y6R ON SOT-23-6 New 详细
LC75879PTS-H ON 80-TQFPJ (12x12) New 详细
6N136V ON 8-DIP New 详细
MC74AC161DR2G ON 16-SOIC New 详细
OPB862T51 ON New 详细
MC74LVX125M ON SOEIAJ-14 New 详细
MC74AC4040D ON 16-SOIC New 详细
PN2222G ON TO-92-3 New 详细
SB520 ON DO-201AD New 详细
NB2304AC1DG ON 8-SOIC New 详细
MC100EPT24DR2 ON 8-SOIC New 详细
H11A2SR2VM ON 6-SMD New 详细