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MUN5235DW1T1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) : 500nA
Power - Max : 250mW
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SC-88/SC70-6/SOT-363
型号 |
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| FDFME3N311ZT | ON | 6-MicroFET (1.6x1.6) | New | 详细 |
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