罗斌森
  • N01L63W2AT25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 1Mb (64K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
1N457_T50R ON DO-35 New 详细
MC74LVXT4066DR2 ON 14-SOIC New 详细
MC74VHC02DR2G ON 14-SOIC New 详细
SIS5102QP2HT1G ON New 详细
NCP699SN50T1G ON 5-TSOP New 详细
FQB4N50TM ON D2PAK (TO-263AB) New 详细
NCP5662DSADJR4G ON D2PAK-5 New 详细
NCP502SQ28T1G ON SC-88A (SC-70-5/SOT-353) New 详细
1N6004B_T50R ON DO-35 New 详细
H11C3300W ON 6-DIP New 详细
MAN6911C ON New 详细
1SMB5929BT3 ON SMB New 详细
MMBT6428LT1G ON SOT-23-3 (TO-236) New 详细
NCP151AAMX180075TCG ON New 详细
BC558TF ON TO-92-3 New 详细
NDP7050 ON TO-220-3 New 详细
MC74HC14ANG ON 14-PDIP New 详细
MMSD4148T3G ON SOD-123 New 详细
FDMC8015L ON 8-MLP (3.3x3.3) New 详细
BC856ALT3 ON SOT-23-3 (TO-236) New 详细