罗斌森
  • N01L63W2AT25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 1Mb (64K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
J108 ON TO-92-3 New 详细
2N5061G ON TO-92-3 New 详细
NTGS4111PT1 ON 6-TSOP New 详细
NLX2G14BMX1TCG ON 6-ULLGA (1.2x1) New 详细
MC78LC15NTR ON 5-TSOP New 详细
CM1430-04DE ON New 详细
FCMT125N65S3 ON 4-PQFN (8x8) New 详细
MMSZ5245BT3G ON SOD-123 New 详细
NCP45520IMNTWG-L ON 8-DFN (2x2) New 详细
MC33033DWR2 ON 20-SOIC New 详细
FAN73912MX ON 16-SOIC New 详细
MC74LVXC3245DWR2 ON 24-SOIC New 详细
BC237CTA ON TO-92-3 New 详细
NGTB30N120IHLWG ON TO-247 New 详细
FJPF5321TU ON TO-220F New 详细
74ACT14MTC ON 14-TSSOP New 详细
MC10EP01DR2G ON 8-SOIC New 详细
MC78M05BDTRKG ON DPAK New 详细
FJAF4310YTU ON TO-3PF New 详细
MJ15004G ON TO-204 (TO-3) New 详细