罗斌森
  • N01L63W3AB25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 1Mb (64K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 48-LFBGA
    Supplier Device Package : 48-BGA (6x8)

极速报价

型号
品牌 封装 批号 查看
BC817-40LT1 ON SOT-23-3 (TO-236) New 详细
RC1587M15 ON TO-263-3 New 详细
QVA11123 ON New 详细
Q2024739 ON New 详细
MC74AC20MELG ON SOEIAJ-14 New 详细
KSB564ACGTA ON TO-92-3 New 详细
MC33274ADR2G ON 14-SOIC New 详细
AR0140CSSC00SUCAH-GEVB ON New 详细
SMUN2111T1G ON SC-59 New 详细
MURH860CTG ON TO-220AB New 详细
MMBT5087 ON SOT-23-3 New 详细
FDP55N06 ON TO-220-3 New 详细
MJ15001G ON TO-204 (TO-3) New 详细
MC10H332FNG ON 20-PLCC (9x9) New 详细
NLV74HC541ADWR2G ON 20-SOIC New 详细
NCP662SQ15T1 ON SC-82AB New 详细
BZX79C5V1-T50A ON DO-35 New 详细
FOD617AW ON 4-DIP New 详细
HGT1S14N36G3VLS ON TO-263AB New 详细
BAY71 ON DO-35 New 详细