罗斌森
  • N01L63W3AT25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 1Mb (64K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
MJD243G ON DPAK New 详细
MJE5852 ON TO-220AB New 详细
CAV24C32WE-GT3 ON 8-SOIC New 详细
KSA916OBU ON TO-92-3 New 详细
MC74AC04NG ON 14-PDIP New 详细
BD677 ON TO-225AA New 详细
NCP1010AP065 ON 7-PDIP New 详细
MC74VHC1G00DTT1G ON 5-TSOP New 详细
MC14532BDR2 ON 16-SOIC New 详细
KA339A ON 14-MDIP New 详细
TIP41BTU ON TO-220-3 New 详细
FQPF7N10L ON TO-220F New 详细
1N5338BRLG ON Axial New 详细
MM3Z3V9ST1G ON SOD-323 New 详细
Z0107MARLRPG ON TO-92-3 New 详细
MC33204VPG ON 14-PDIP New 详细
H11AG1300 ON 6-DIP New 详细
NCP5106BDR2G ON 8-SOIC New 详细
NCS36000GEVB ON New 详细
DM74ALS09N ON 14-PDIP New 详细