罗斌森
  • 2N5550_J24Z

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 140V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 300MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
ADP3166JRU-REEL7 ON 28-TSSOP New 详细
MANF960C ON New 详细
BC547CNMBU ON TO-92-3 New 详细
H11G33S ON 6-SMD New 详细
FQPF7N10 ON TO-220F New 详细
FODM3012-NF098 ON 4-SMD New 详细
SZMMSZ56T1G ON SOD-123 New 详细
TN6719A_D75Z ON TO-226 New 详细
CAT93C46BXI-T2 ON New 详细
L14R1 ON New 详细
ATP213-TL-H ON ATPAK New 详细
74F573SJX ON 20-SOP New 详细
SMF85AT1G ON SOD-123FL New 详细
NSR20F40NXT5G ON 2-DSN (1.6x.80) New 详细
CS8221YDPR3G ON D2PAK-3 New 详细
Q2026367 ON New 详细
74F109SJ ON New 详细
QLA764B3I ON New 详细
NDD60N900U1T4G ON DPAK New 详细
MC74LVX8051DR2 ON 16-SOIC New 详细