罗斌森
  • 2N5551CBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 160V
    Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NDD04N60Z-1G ON I-PAK New 详细
MMBZ33VALT3G ON SOT-23-3 (TO-236) New 详细
NCP303LSN38T1G ON 5-TSOP New 详细
LM385BZ-1.2RAG ON TO-92-3 New 详细
1SMB5931BT3 ON SMB New 详细
NTLJS1102PTAG ON 6-WDFN (2x2) New 详细
4N28FR2VM ON 6-SMD New 详细
MM74HC00SJ ON 14-SOP New 详细
MC74LVX259MELG ON 16-SOEIAJ New 详细
1N5353BRLG ON Axial New 详细
2N5638_D26Z ON TO-92-3 New 详细
74ACTQ823SPC ON New 详细
74F240SC ON 20-SOIC New 详细
KSB1097YTU ON TO-220F New 详细
FDMD85100 ON 8-Power 5x6 New 详细
MBRD660CTRL ON DPAK New 详细
MBR120LSFT3G ON SOD-123FL New 详细
FSTU6800WMX ON 24-SOP New 详细
BC369_J35Z ON TO-92-3 New 详细
NLU1G14BMX1TCG ON 6-ULLGA (1.2x1) New 详细