罗斌森
  • 2N5551CYTA

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 160V
    Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
H11A43SD ON 6-SMD New 详细
NTLJD3119CTBG ON 6-WDFN (2x2) New 详细
ARRAYX-BOB3-16P-GEVK ON New 详细
KSC2786RTA ON TO-92S New 详细
BC547CTAR ON TO-92-3 New 详细
74LVTH244SJX ON 20-SOP New 详细
TIL113300W ON 6-DIP New 详细
NCP802SAN5T1 ON 6-SON New 详细
S110FA ON SOD-123FA New 详细
FEBFSFR2100-D015V1-GEVB ON New 详细
2SA1708S-YMH-AN ON New 详细
FDS6682 ON 8-SOIC New 详细
NCV78M05ABDTRKG ON DPAK New 详细
NCP380HSN10AGEVB ON New 详细
NCP1612ADR2G ON 10-SOIC New 详细
ADM1024ARUZ-REEL ON 24-TSSOP New 详细
FDW2507N ON 8-TSSOP New 详细
74ACT125SJX ON 14-SOP New 详细
74LVT2240WMX ON 20-SOIC New 详细
DBA40G ON New 详细