罗斌森
  • 2N5551G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 160V
    Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 300MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NTDV5805NT4G ON DPAK New 详细
MC74AC374DWR2 ON New 详细
MMBD1501 ON SOT-23-3 New 详细
NC7WZ240K8X ON US8 New 详细
MBRD320 ON DPAK New 详细
74F269SC ON 24-SOP New 详细
1N5987B ON DO-35 New 详细
FST3257M ON 16-SOIC New 详细
NJVMJD127T4G ON DPAK New 详细
FODM3051R2 ON 4-SMD New 详细
FSB50450US ON New 详细
NRVB120ESFT1G ON SOD-123 New 详细
BZX85C30_T50A ON DO-204AL (DO-41) New 详细
MSD601-RT1G ON SC-59 New 详细
NTHS4166NT1G ON ChipFET? New 详细
BC212_D74Z ON TO-92-3 New 详细
MC33560DW ON 24-SOIC New 详细
MC78L05ABPREG ON TO-92-3 New 详细
MC74HC157ADTR2 ON 16-TSSOP New 详细
ATP101-TL-H ON ATPAK New 详细