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2N5551ZL1G
- Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 600mA
Voltage - Collector Emitter Breakdown (Max) : 160V
Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) : 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Power - Max : 625mW
Frequency - Transition : 300MHz
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
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