产品系列
2N5639G
- Manufacturer : ON Semiconductor
Packaging : Bulk
Part Status : Obsolete
FET Type : N-Channel
Voltage - Breakdown (V(BR)GSS) : 35V
Drain to Source Voltage (Vdss) : 30V
Current - Drain (Idss) @ Vds (Vgs=0) : 25mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 12V (VGS)
Resistance - RDS(On) : 60 Ohms
Power - Max : 310mW
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package : TO-92-3
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