罗斌森
  • 2N5770_D75Z

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Box (TB)
    Part Status : Obsolete
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 15V
    Noise Figure (dB Typ @ f) : 6dB @ 60MHz
    Gain : 15dB
    Power - Max : 350mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 8mA, 10V
    Current - Collector (Ic) (Max) : 50mA
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
MAC12SM ON TO-220AB New 详细
FQP3N80C ON TO-220AB New 详细
MJD45H11G ON DPAK New 详细
NLU1GT14AMX1TCG ON 6-ULLGA (1.45x1) New 详细
MC74ACT14DR2G ON 14-SOIC New 详细
QTLP9138GR ON Subminiature T-3/4 New 详细
NCP585HSN12T1G ON SOT-23-5 New 详细
BZX79C3V0_T50A ON DO-35 New 详细
FW812-TL-E ON 8-SOP New 详细
BC856ALT3 ON SOT-23-3 (TO-236) New 详细
MM74HC273N ON New 详细
74ACTQ245PC ON 20-PDIP New 详细
74LVTH543MTC ON 24-TSSOP New 详细
MM3Z11VB ON SOD-323F New 详细
NCP12510ASN65T1G ON 6-TSOP New 详细
NTP8G202NG ON TO-220-3 New 详细
FDG6321C ON SC-88 (SC-70-6) New 详细
FFB2907A ON SC-88 (SC-70-6) New 详细
1N6000B ON DO-35 New 详细
CS51411GDR8 ON 8-SOIC New 详细