罗斌森
  • 2N5886G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 25A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 4V @ 6.25A, 25A
    Current - Collector Cutoff (Max) : 2mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10A, 4V
    Power - Max : 200W
    Frequency - Transition : 4MHz
    Operating Temperature : -65°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

极速报价

型号
品牌 封装 批号 查看
1N4740ATR ON DO-41 New 详细
SBRS8130LT3G ON SMB New 详细
FJX3015RTF ON SC-70 (SOT323) New 详细
MC74AC161M ON 16-SOEIAJ New 详细
STK611-721-E ON 19-SIP New 详细
BCV26 ON SOT-23-3 New 详细
MM74C906M ON 14-SOIC New 详细
LM317BD2TR4G ON D2PAK New 详细
NVMFS4C03NWFT3G ON 5-DFN (5x6) (8-SOFL) New 详细
NVHL027N65S3F ON TO-247-3 New 详细
MAN73A ON New 详细
NCP1252DDR2G ON 8-SOIC New 详细
MC100LVEP16MNR4 ON 8-DFN (2x2) New 详细
MC74ACT377DWR2G ON New 详细
MC78M06BT ON TO-220AB New 详细
1PMT24AT1 ON Powermite New 详细
FSA110UMX ON 10-UMLP (1.8x1.4) New 详细
MC10EP31DTR2G ON New 详细
NCP303LSN47T1 ON 5-TSOP New 详细
2SK3738-TL-E ON SMCP New 详细