罗斌森
  • NGTB35N60FL2WG

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    IGBT Type : Trench Field Stop
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 70A
    Current - Collector Pulsed (Icm) : 120A
    Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 35A
    Power - Max : 300W
    Switching Energy : 840μJ (on), 280μJ (off)
    Input Type : Standard
    Gate Charge : 125nC
    Td (on/off) @ 25°C : 72ns/132ns
    Test Condition : 400V, 35A, 10 Ohm, 15V
    Reverse Recovery Time (trr) : 68ns
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

极速报价

型号
品牌 封装 批号 查看
NTTFS4C10NTAG ON 8-WDFN (3.3x3.3) New 详细
MC74AC540NG ON 20-PDIP New 详细
MJD128T4 ON DPAK New 详细
1N5257B ON DO-35 New 详细
MUR240 ON Axial New 详细
100331SC ON New 详细
NSVMMBTH10LT1G ON SOT-23 New 详细
1N5337BRL ON Axial New 详细
FDMS4D0N12C ON 8-PQFN (5x6) New 详细
BC546A_J35Z ON TO-92-3 New 详细
SURA8160T3G ON SMA New 详细
MC78L05ABPRPG ON New 详细
LC75829PE-H ON New 详细
MC44608P75G ON 8-PDIP New 详细
74ACT00MTCX ON 14-TSSOP New 详细
1N5261B_T50R ON DO-35 New 详细
FOD3120V ON 8-DIP New 详细
MC74AC245DTG ON 20-TSSOP New 详细
MMBTH10-4LT1 ON SOT-23-3 (TO-236) New 详细
KBP06M ON KBPM New 详细