罗斌森
  • NSBA114TDP6T5G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 10 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 408mW
    Package / Case : SOT-963
    Supplier Device Package : SOT-963

极速报价

型号
品牌 封装 批号 查看
MC74HCT74AN ON New 详细
MC74HC393AFELG ON SOEIAJ-14 New 详细
BC548CTFR ON TO-92-3 New 详细
NCP571SN09T1GEVB ON New 详细
FHP3194IMTC14X ON 14-TSSOP New 详细
BC368_J35Z ON TO-92-3 New 详细
BC546ATAR ON TO-92-3 New 详细
AR0832EASC25SUFAH-GEVB ON New 详细
CAT5113YI-00-T3 ON 8-TSSOP New 详细
74LCXH16374MTD ON New 详细
2N3417_D75Z ON TO-92-3 New 详细
1SMB5947BT3 ON SMB New 详细
SS9013HTA ON TO-92-3 New 详细
MAX809SQ263T1G ON SC-70-3 (SOT323) New 详细
LB11961V-TLM-H ON 16-SSOP New 详细
SI4542DY ON 8-SOIC New 详细
FYP1010DNTU ON TO-220-3 New 详细
LM258NG ON 8-PDIP New 详细
NST489AMT1 ON 6-TSOP New 详细
74ACT258SJ ON 16-SOP New 详细