罗斌森
  • NSBA123EDXV6T1

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    Transistor Type : 2 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 2.2 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 8 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

极速报价

型号
品牌 封装 批号 查看
LM2931CT ON TO-220-5 New 详细
KSC388YBU ON TO-92-3 New 详细
NCP1216AP133 ON 7-PDIP New 详细
MC100H601FNR2G ON 28-PLCC (11.51x11.51) New 详细
MC74HC574ANG ON New 详细
74ACT273PC ON New 详细
FCU360N65S3R0 ON I-PAK New 详细
FSB70625 ON New 详细
SZMM5Z2V4T1G ON SOD-523 New 详细
KSC945CLTA ON TO-92-3 New 详细
LC72720YV-TLM-E ON 30-SSOP New 详细
MTB75N05HDT4 ON D2PAK New 详细
MCT22013SD ON 6-SMD New 详细
P3P8163AG-08SR ON 8-SOIC New 详细
TL431BCDR2G ON 8-SOIC New 详细
SMMUN2111LT1G ON SOT-23-3 (TO-236) New 详细
MMBD352WT1G ON SC-70-3 (SOT323) New 详细
HMA124R1 ON 4-SMD New 详细
MC100EL11DTR2G ON 8-TSSOP New 详细
FDU7030BL ON I-PAK New 详细