罗斌森
  • NSBA143ZDXV6T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 4.7 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

极速报价

型号
品牌 封装 批号 查看
HUFA75344G3 ON TO-247 New 详细
FMS6407MTF20X ON 20-TSSOP New 详细
MM3Z43VB ON SOD-323F New 详细
BC32716_J35Z ON TO-92-3 New 详细
MM3Z2V7T1G ON SOD-323 New 详细
NE5517DR2 ON 16-SOIC New 详细
MURD310T4 ON DPAK New 详细
4N31300 ON 6-DIP New 详细
MT9V115EBKSTCH-GEVB ON New 详细
NVMFS5C628NLWFT3G ON 5-DFN (5x6) (8-SOFL) New 详细
NCV8502D50G ON 8-SOIC New 详细
BC548BZL1G ON TO-92-3 New 详细
NUF2450MUT2G ON New 详细
MC33368DR2G ON 16-SOIC New 详细
MC34167D2TR4G ON D2PAK-5 New 详细
2SB1216S-TL-H ON 2-TP-FA New 详细
SA51AG ON Axial New 详细
2SK715V-AC ON 3-SPA New 详细
CAT5114ZI-50-T3 ON New 详细
FFPF04H60STU ON TO-220F-2L New 详细