罗斌森
  • NSBC123EPDXV6T1

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 2.2 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 8 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

极速报价

型号
品牌 封装 批号 查看
BZX79C6V2-T50A ON DO-35 New 详细
ADM1028ARQ ON 16-QSOP New 详细
NCL30083BB1GEVB ON New 详细
KSC2669OBU ON TO-92S New 详细
FAN5000AMX ON New 详细
AR0330CS1C12SPKAH3-GEVB ON New 详细
MMSZ5239BT1G ON SOD-123 New 详细
FSAU3157P6X ON SC-88 (SC-70-6) New 详细
NDS9430 ON 8-SOIC New 详细
FIN1048MTCX ON 16-TSSOP New 详细
BAY73_T50R ON DO-35 New 详细
HUF75831SK8T ON 8-SOIC New 详细
NCV2574DW-ADJR2 ON 16-SOIC New 详细
2N5461 ON TO-92-3 New 详细
2SC3649S-TD-H ON PCP New 详细
DM74LS151N ON 16-PDIP New 详细
MOC3083M ON 6-DIP New 详细
BC857CLT1G ON SOT-23-3 (TO-236) New 详细
SA60CA ON DO-15 New 详细
DTC115EET1G ON SC-75, SOT-416 New 详细