罗斌森
  • NSBC123EPDXV6T1

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 2.2 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 8 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

极速报价

型号
品牌 封装 批号 查看
MCH6448-TL-W ON SC-88FL/MCPH6 New 详细
NTR1P02T3 ON SOT-23-3 (TO-236) New 详细
KSE182STU ON TO-126-3 New 详细
CM1630-06DE ON New 详细
NVMFS5C612NLWFT1G ON 5-DFN (5x6) (8-SOFL) New 详细
NCT208DBR2G ON New 详细
MV6366T ON T-1 New 详细
PN5434 ON TO-92-3 New 详细
SA15ARL ON Axial New 详细
MBR1645G ON TO-220-2 New 详细
L78M05T-TR-E ON New 详细
NCP1083WIRGEVB ON New 详细
MR33519MP8 ON New 详细
FOD2742AR2 ON 8-SOIC New 详细
H11AA4TM ON 6-DIP New 详细
SA5534N ON 8-PDIP New 详细
M74VHC1GT32DTT1G ON 5-TSOP New 详细
FJNS4211RTA ON TO-92S New 详细
74VHCT04ASJX ON 14-SOP New 详细
KSC2330RBU ON TO-92-3 New 详细