罗斌森
  • NSBC124EDXV6T1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 22 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

极速报价

型号
品牌 封装 批号 查看
MC1403P1 ON 8-PDIP New 详细
HMA121R3V ON 4-SMD New 详细
FDFME3N311ZT ON 6-MicroFET (1.6x1.6) New 详细
FCD4N60TM_WS ON D-Pak New 详细
ICTE-005 ON Axial New 详细
NCP1607BDR2G ON 8-SOIC New 详细
KAI-11002-CAA-CD-B2 ON 40-CDIP New 详细
74LVT16244MTD ON 48-TSSOP New 详细
HUF75939P3 ON TO-220-3 New 详细
MSD1328-RT1G ON SC-59 New 详细
1N4738ATR ON DO-41 New 详细
MMUN2211LT3 ON SOT-23-3 (TO-236) New 详细
NGTB05N60R2DT4G ON DPAK New 详细
BC847AWT1G ON SC-70-3 New 详细
FDMC86324 ON Power33 New 详细
FAN7529N ON 8-DIP New 详细
HUF75333S3 ON I2PAK (TO-262) New 详细
NCP433FCT2G ON 4-WLCSP (0.76x0.76) New 详细
MC10LVEP16DR2 ON 8-SOIC New 详细
MMBFJ310LT3G ON SOT-23-3 (TO-236) New 详细