罗斌森
  • 2N6491G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 15A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 3.5V @ 5A, 15A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 5A, 4V
    Power - Max : 1.8W
    Frequency - Transition : 5MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220AB

极速报价

型号
品牌 封装 批号 查看
NCP1835BMNR2G ON 10-DFN (3x3) New 详细
BAV70T ON SOT-523 New 详细
SMDA15CDR2G ON 8-SOIC New 详细
ESD5Z3.3T1 ON SOD-523 New 详细
BZX84C18 ON SOT-23-3 New 详细
FDS6570A ON 8-SOIC New 详细
2SC6095-TD-E ON PCP New 详细
MUN5237DW1T1 ON SC-88/SC70-6/SOT-363 New 详细
H11A33S ON 6-SMD New 详细
DM74AS1000AM ON 14-SOIC New 详细
TIL111300W ON 6-DIP New 详细
MC74LCX158MEL ON 16-SOEIAJ New 详细
MJD122T4 ON DPAK New 详细
NTMFS6H800NT1G ON 5-DFN (5x6) (8-SOFL) New 详细
SZMMSZ5250BT1G ON SOD-123 New 详细
NCP380HMU05AGEVB ON New 详细
MC74VHC1G00DTT1G ON 5-TSOP New 详细
KSC2982BTF ON SOT-89-3 New 详细
TCC-303A-RT ON 12-WLCSP (1.38x1.03) New 详细
HLMPD640 ON T-1 3/4 New 详细