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2N6517BU
- Manufacturer : ON Semiconductor
Packaging : Bulk
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 350V
Vce Saturation (Max) @ Ib, Ic : 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) : 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 50mA, 10V
Power - Max : 625mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package : TO-92-3
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