罗斌森
  • 2N6667G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : PNP - Darlington
    Current - Collector (Ic) (Max) : 10A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 100mA, 10A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 5A, 3V
    Power - Max : 2W
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220AB

极速报价

型号
品牌 封装 批号 查看
2SC5414AF-AA ON 3-NP New 详细
NCL30083FLYGEVB ON New 详细
FEBFAN7688-I00250A-GEVB ON New 详细
FDC658AP ON SuperSOT?-6 New 详细
SMMUN2114LT1G ON SOT-23-3 (TO-236) New 详细
BZG03C150 ON SMA New 详细
FAN5902MPX ON 12-MLP (3.5x3) New 详细
NTS10100MFST3G ON 5-DFN (5x6) (8-SOFL) New 详细
FJV1845PMTF ON SOT-23-3 New 详细
NOIL1SM4000A-GDC ON 127-PGA (42x42) New 详细
MC100EP195BFAR2G ON 32-LQFP (7x7) New 详细
MAC97A6RL1G ON TO-92-3 New 详细
NE5532AN ON 8-PDIP New 详细
74F125SC ON 14-SOIC New 详细
LV52205MUGEVB ON New 详细
1N5349B ON Axial New 详细
74VHCT14AMX ON 14-SOIC New 详细
MC100EP139DTR2 ON 20-TSSOP New 详细
CAT24C02YI-G ON 8-TSSOP New 详细
FAN7384MX ON 14-SOP New 详细