罗斌森
  • NSVMMBTH10LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Frequency - Transition : 650MHz
    Power - Max : 225mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 4mA, 10V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23

极速报价

型号
品牌 封装 批号 查看
CAT25256XI-T2 ON 8-SOIC New 详细
FCAS20DN60BB ON New 详细
74VCX38MTC ON 14-TSSOP New 详细
1N457_T50R ON DO-35 New 详细
FAN4010IL6X ON 6-MicroPak New 详细
CAT28LV256G-25T ON 32-PLCC (11.43x13.97) New 详细
LA6324NM-TLM-E ON 14-MFP New 详细
H11L1FR2M ON 6-SMD New 详细
74LCX00BQX ON 14-DQFN (3x2.5) New 详细
NCV8705MT30TCG ON 6-WDFN (2x2) New 详细
FDMS86105 ON 8-PQFN (5x6) New 详细
MURA230T3 ON SMA New 详细
MBR41H100CTH ON New 详细
MC14011BDR2G ON 14-SOIC New 详细
KA319 ON 14-DIP New 详细
MC74HC138ADTR2G ON 16-TSSOP New 详细
H22B2 ON New 详细
BC636TF ON TO-92-3 New 详细
FSB50450US ON New 详细
NCV5183DR2G ON 8-SOIC New 详细