产品系列
产品系列
NTD5C648NLT4G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 30V
Power Dissipation (Max) : 4.4W (Ta), 76W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK (SINGLE GAUGE)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
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