产品系列
产品系列
NTS2101PT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 6.4nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 8V
Power Dissipation (Max) : 290mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70-3 (SOT323)
Package / Case : SC-70, SOT-323
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