产品系列
NTMD6601NR2G
- Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 1.1A
Rds On (Max) @ Id, Vgs : 215 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 25V
Power - Max : 600mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
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