产品系列
NTMD6N02R2G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.92A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 16V
Power - Max : 730mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
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