产品系列
NTMD6P02R2G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.8A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 16V
Power - Max : 750mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
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