罗斌森
  • NGTB20N135IHRWG

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    IGBT Type : Trench Field Stop
    Voltage - Collector Emitter Breakdown (Max) : 1350V
    Current - Collector (Ic) (Max) : 40A
    Current - Collector Pulsed (Icm) : 120A
    Vce(on) (Max) @ Vge, Ic : 2.65V @ 15V, 20A
    Power - Max : 394W
    Switching Energy : 600μJ (off)
    Input Type : Standard
    Gate Charge : 234nC
    Td (on/off) @ 25°C : -/245ns
    Test Condition : 600V, 20A, 10 Ohm, 15V
    Operating Temperature : -40°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

极速报价

型号
品牌 封装 批号 查看
NGTB40N60FLWG ON TO-247 New 详细
NCP7805ACTG ON TO-220AB New 详细
LM2576D2TR4-3.3G ON D2PAK-5 New 详细
1N5262B ON DO-35 New 详细
6N136TVM ON 8-DIP New 详细
2N4953 ON TO-92-3 New 详细
KAI-2001-ABA-CP-BA ON 32-CDIP New 详细
HCPL0731 ON 8-SOIC New 详细
SZMMBZ5231BLT1G ON SOT-23-3 (TO-236) New 详细
NDS9948 ON 8-SOIC New 详细
2SA2222SG ON TO-220ML New 详细
NJVNJD35N04T4G ON DPAK New 详细
74F157APC ON 16-PDIP New 详细
ADM1032ARM ON Micro8? New 详细
H11A817DSD ON 4-SMD New 详细
NCP1081SPCGEVB ON New 详细
FW344A-TL-2W ON 8-SOIC New 详细
NVD3055L170T4G-VF01 ON New 详细
LC709203FQH-01-GEVB ON New 详细
NDD60N360U1T4G ON DPAK New 详细