产品系列
产品系列
2SK4124-1E
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 430 mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs : 46.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 30V
Power Dissipation (Max) : 2.5W (Ta), 170W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P-3L
Package / Case : TO-3P-3, SC-65-3
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