罗斌森
  • 2SB1201T-E

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 2A
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 700mV @ 50mA, 1A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 2V
    Power - Max : 800mW
    Frequency - Transition : 150MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : TP

极速报价

型号
品牌 封装 批号 查看
MAN3440A ON New 详细
SS16 ON SMA (DO-214AC) New 详细
NCP702SN33T1GEVB ON New 详细
FDD306P ON TO-252 New 详细
QED121A4R0 ON New 详细
74VCX16501MTDX ON 56-TSSOP New 详细
CAT5112VI-50-T3 ON 8-SOIC New 详细
MJD210RLG ON DPAK New 详细
MV5464MP4B ON New 详细
NCV33161DR2G ON 8-SOIC New 详细
NLV14066BCPG ON 14-PDIP New 详细
CAT6218-240TDGT3 ON TSOT-23-5 New 详细
MC10EP52DR2G ON New 详细
LM2594DADJR2G ON 8-SOIC New 详细
SZMMBZ15VAWT1G ON SC-70-3 (SOT323) New 详细
NRVA4007T3G ON SMA New 详细
FPF2280BUCX-F130 ON 12-WLCSP (1.29x1.83) New 详细
MBR2515LG ON TO-220-2 New 详细
SMUN5213T1G ON SC-70-3 (SOT323) New 详细
MJD340T4 ON DPAK New 详细