罗斌森
  • 2SB817C-1E

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 12A
    Voltage - Collector Emitter Breakdown (Max) : 140V
    Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
    Current - Collector Cutoff (Max) : 100μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1A, 5V
    Power - Max : 120W
    Frequency - Transition : 10MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-3P-3, SC-65-3
    Supplier Device Package : TO-3P-3L

极速报价

型号
品牌 封装 批号 查看
6N137SDVM ON 8-SMD New 详细
1N5222B_T50A ON DO-35 New 详细
2SB1143S ON TO-126ML New 详细
NTD4960NT4G ON DPAK New 详细
CS5253B-8GDPR5G ON D2PAK-5 New 详细
SS15FA ON SOD-123FA New 详细
HLMP4700L ON T-1 3/4 New 详细
FQPF3N60 ON TO-220F New 详细
SZMMSZ4692T1G ON SOD-123 New 详细
FSA4159P6X ON SC-88 (SC-70-6) New 详细
NCP563SQ25T1G ON SC-82AB New 详细
MBD330DWT1G ON SC-88/SC70-6/SOT-363 New 详细
CM6320 ON New 详细
LM2904SNG ON 8-PDIP New 详细
FGPF4536YDTU ON New 详细
MC33269DG ON 8-SOIC New 详细
KAF-50100-FAA-JD-AA ON New 详细
NCP4354AADAPGEVB ON New 详细
74F30PC ON 14-PDIP New 详细
FODM8061R2V ON 5-Mini-Flat New 详细