产品系列
产品系列
NTD3808N-1G
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 16V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 4.5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 1660pF @ 12V
Power Dissipation (Max) : 1.3W (Ta), 52W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
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