产品系列
产品系列
NTD4815N-35G
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 11.5V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 14.1nC @ 11.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 770pF @ 12V
Power Dissipation (Max) : 1.26W (Ta), 32.6W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I-PAK
Package / Case : TO-251-3 Stub Leads, IPak
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