产品系列
产品系列
NTMS5P02R2G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id : 1.25V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 4.5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 16V
Power Dissipation (Max) : 790mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)
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