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产品系列
NTTFS6H850NTAG
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 70μA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 40V
Power Dissipation (Max) : 3.2W (Ta), 107W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-WDFN (3.3x3.3)
Package / Case : 8-PowerWDFN
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