罗斌森
  • 2SD1803T-E

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 5A
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 150mA, 3A
    Current - Collector Cutoff (Max) : 1μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 500mA, 2V
    Power - Max : 1W
    Frequency - Transition : 180MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : TP

极速报价

型号
品牌 封装 批号 查看
MC10H103FNR2 ON 20-PLCC (9x9) New 详细
LA1787NM-TLM-E ON 64-QIPE (14x14) New 详细
NC7SVU04P5X ON SC-70-5 New 详细
FGH75T65UPD-F085 ON TO-247-3 New 详细
74ACT175SJX ON New 详细
NB3N4666CDTR2G ON 16-TSSOP New 详细
MC100EL58DG ON 8-SOIC New 详细
FCP650N80Z ON TO-220 New 详细
SZMMSZ5251BT1G ON SOD-123 New 详细
NCV8501D33 ON 8-SOIC New 详细
FDS86252 ON 8-SOIC New 详细
UC3842BVD1G ON 8-SOIC New 详细
74LCX06M ON 14-SOIC New 详细
KSB707RTU ON TO-220-3 New 详细
MC74VHC126DR2G ON 14-SOIC New 详细
CS8191XNF16 ON 16-DIP New 详细
NTB75N03L09T4G ON D2PAK New 详细
MMBD354LT1G ON SOT-23-3 (TO-236) New 详细
2SC536NF-NPA-AT ON TO-226AA New 详细
FJNS4203RBU ON TO-92S New 详细