罗斌森
  • 2SD1816S-E

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 1μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 500mA, 5V
    Power - Max : 1W
    Frequency - Transition : 180MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : TP

极速报价

型号
品牌 封装 批号 查看
NB7VQ58MMNG ON 16-QFN (3x3) New 详细
LV5061V-TLM-H ON 16-SSOP New 详细
TL431CLPRPG ON TO-92-3 New 详细
FDS6894A ON 8-SOIC New 详细
NCV7705DQAR2G ON New 详细
CM6305 ON New 详细
SMMBT3904LT1G ON SOT-23-3 (TO-236) New 详细
H11C3300W ON 6-DIP New 详细
1PMT5939BT1G ON Powermite New 详细
BF720T1G ON SOT-223 New 详细
CAT5112VI-10-G ON 8-SOIC New 详细
NDD60N900U1T4G ON DPAK New 详细
2N5461RLRA ON TO-92-3 New 详细
FQA7N80_F109 ON TO-3P New 详细
NCP2860DM277R2 ON Micro8? New 详细
CNY17F23SD ON 6-SMD New 详细
SA150A ON DO-15 New 详细
MC34025PG ON 16-PDIP New 详细
D45VH10G ON TO-220AB New 详细
FQN1N50CBU ON TO-92-3 New 详细