产品系列
NVMFD5875NLT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 7A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V
Power - Max : 3.2W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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