产品系列
2SK3666-3-TB-E
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Drain to Source Voltage (Vdss) : 30V
Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
Current Drain (Id) - Max : 10mA
Voltage - Cutoff (VGS off) @ Id : 180mV @ 1μA
Input Capacitance (Ciss) (Max) @ Vds : 4pF @ 10V
Resistance - RDS(On) : 200 Ohms
Power - Max : 200mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : 3-CP
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