产品系列
产品系列
2SK536-TB-E
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 10mA, 10V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 15pF @ 10V
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-59
Package / Case : TO-236-3, SC-59, SOT-23-3
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