产品系列
产品系列
RFD16N05LSM9A
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 5V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id : 2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±10V
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252AA
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
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