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NSVB123JPDXV6T1G
- Manufacturer : ON Semiconductor
Packaging : Tape & Reel (TR)
Part Status : Obsolete
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
Current - Collector Cutoff (Max) : 500nA
Power - Max : 500mW
Package / Case : SOT-563, SOT-666
Supplier Device Package : SOT-563
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