产品系列
产品系列
55GN01CA-TB-E
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 10V
Frequency - Transition : 4.5GHz
Noise Figure (dB Typ @ f) : 1.9dB @ 1GHz
Gain : 9.5dB
Power - Max : 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
Current - Collector (Ic) (Max) : 70mA
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : 3-CP
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