罗斌森
  • BQ4011MA-100

  • Manufacturer : Texas Instruments
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 256Kb (32K x 8)
    Write Cycle Time - Word, Page : 100ns
    Access Time : 100ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.5V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 28-DIP Module (0.61", 15.49mm)
    Supplier Device Package : 28-DIP Module (18.42x37.72)

极速报价

型号
品牌 封装 批号 查看
74LVC1GU04DCKRG4 TI New 详细
TPS259271DRCR TI 10-VSON (3x3) New 详细
TL431CLP-Z TI New 详细
SN74CBT16800CDGVR TI 48-TVSOP New 详细
LMC6492BEMX/NOPB TI 8-SOIC New 详细
SN74LVC1G14YEAR TI 5-DSBGA, 5-WCSP (1.4x0.9) New 详细
DRV8873SPWPT TI 24-HTSSOP New 详细
LMR23610AEVM TI New 详细
EKS-LM3S2965 TI New 详细
CC2533DK TI New 详细
LP8345IDTX-2.5/NOPB TI TO-252-3 New 详细
TPS3850H01QDRCRQ1 TI 10-VSON (3x3) New 详细
TXS0108EZXYR TI 20-BGA Microstar Junior (2.5x3.0) New 详细
SN74HCT377N TI New 详细
CDCLVC1102PWR TI 8-TSSOP New 详细
LM99CIMMX/NOPB TI 8-VSSOP New 详细
LMR33630BDDA TI 8-SO PowerPad New 详细
SN74CBTR16861DGGR TI 48-TSSOP New 详细
LM3674MF-1.5/NOPB TI SOT-23-5 New 详细
TMP411BDGKR TI 8-VSSOP New 详细