产品系列
BQ4011MA-200
- Manufacturer : Texas Instruments
Packaging : Tray
Part Status : Obsolete
Memory Type : Non-Volatile
Memory Format : NVSRAM
Technology : NVSRAM (Non-Volatile SRAM)
Memory Size : 256Kb (32K x 8)
Write Cycle Time - Word, Page : 200ns
Access Time : 200ns
Memory Interface : Parallel
Voltage - Supply : 4.75V ~ 5.5V
Operating Temperature : 0°C ~ 70°C (TA)
Mounting Type : Through Hole
Package / Case : 28-DIP Module (0.61", 15.49mm)
Supplier Device Package : 28-DIP Module (18.42x37.72)
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