产品系列
BQ4014MB-120
- Manufacturer : Texas Instruments
Packaging : Tube
Part Status : Obsolete
Memory Type : Non-Volatile
Memory Format : NVSRAM
Technology : NVSRAM (Non-Volatile SRAM)
Memory Size : 2Mb (256K x 8)
Write Cycle Time - Word, Page : 120ns
Access Time : 120ns
Memory Interface : Parallel
Voltage - Supply : 4.75V ~ 5.5V
Operating Temperature : 0°C ~ 70°C (TA)
Mounting Type : Through Hole
Package / Case : 32-DIP Module (0.61", 15.49mm)
Supplier Device Package : 32-DIP Module (18.42x52.96)
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