罗斌森
  • BQ4016MC-70

  • Manufacturer : Texas Instruments
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 8Mb (1M x 8)
    Write Cycle Time - Word, Page : 70ns
    Access Time : 70ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.5V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 36-DIP Module (0.610", 15.49mm)
    Supplier Device Package : 36-DIP Module (18.42x52.96)

极速报价

型号
品牌 封装 批号 查看
TPS61200DRCR TI 10-VSON (3x3) New 详细
SN74ALVCH162835DLR TI 56-SSOP New 详细
SN75LVDS32PWR TI 16-TSSOP New 详细
TL062IDR TI 8-SOIC New 详细
THS6012IDWP TI 20-SO PowerPad New 详细
TLV5608IYER TI Diesale New 详细
SN65LVDS4RSET TI 10-UQFN (2.0x1.5) New 详细
SN75161BDWR TI 20-SOIC New 详细
TPS3813L30DBVT TI SOT-23-6 New 详细
SN74AUP1T57DSFR TI 6-SON (1x1) New 详细
SN74AHC139RGYR TI 16-VQFN (4x4) New 详细
TPS92411DBVR TI SOT-23-5 New 详细
LM4140ACM-1.2 TI 8-SOIC New 详细
MC3487DR TI 16-SOIC New 详细
LM2931ASX-5.0 TI DDPAK/TO-263-3 New 详细
TLV2442QDRQ1 TI 8-SOIC New 详细
LT1009CPWE4 TI 8-TSSOP New 详细
CD4572UBMTG4 TI 16-SOIC New 详细
SN74ALS258ANSR TI 16-SO New 详细
SN74AUP1G74DQER TI New 详细