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产品系列
CSD17579Q3AT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.2 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 1.9V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 998pF @ 15V
Power Dissipation (Max) : 3.2W (Ta), 29W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-VSONP (3x3.15)
Package / Case : 8-PowerVDFN
型号 |
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| SN74LVC1G06DCKRG4 | TI | New | 详细 | ||
| LM3S9U81-IBZ80-A1 | TI | 108-BGA (10x10) | New | 详细 | |
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| SN65220DBVR | TI | SOT-23-6 | New | 详细 | |
| LM2679SD-ADJ/NOPB | TI | 14-VSON (5x6) | New | 详细 |
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